On the structure and ultraviolet emission of terbium doped zinc oxide thin films on silicon after high temperature treatment
نویسندگان
چکیده
Terbium (Tb) doped zinc oxide (ZnO) thin films were deposited on Si substrates by magnetron sputtering in an oxygen containing plasma. The Tb doping concentration was varied from 0 to 0.38 at.%. effect of heat treatment at high temperature the ultraviolet (UV) emission studied along with structure films. Photoluminescence (PL) spectra show that UV intensity increases much and after 1000 °C annealing have stronger than un-doped film. enhanced is related crystallinity improvements After Zn silicates had formed. film prepared a 0.029 at.% showed best highest intensity. Finally, it shown PL can be increased further TiN nanoparticle capping surface
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ژورنال
عنوان ژورنال: Results in physics
سال: 2022
ISSN: ['2211-3797']
DOI: https://doi.org/10.1016/j.rinp.2021.105121